PRESENTATIONS ISPS 2016

ArticleAuthor
Silicon Carbide Power Device Technology;Fabrication issues and state of the art devicesM. Östling
Fast Diode Anode Design Concepts for IGBT ApplicationsC. Papadopoulos, M. Rahimo, C. Corvasce, J. Vobecky, S. Matthias, A. Kopta, R. Jabrany
Novel cathode design to improve the ESD capability of 600V Fast Recovery Epitaxial DiodesL. Marescaa, G. De Caroa, G. Romanoa, M. Riccioa, G. Breglioa, A. Iracea, L. Bellemob, R. Cartab and N. El Baradaib
The HGTD: A SOI Power Diode for Timing Detection ApplicationsM. Carulla, D. Flores, S. Hidalgo, D. Quirion, G. Pellegrini
Overcoming Switching Limits in Silicon Power MOSFETs with Silicon-Based SolutionsJ. Roig, F. Declercq and F. Bauwens
Monolithically-Integrated Power Circuits in High-Voltage GaN-on-Si Heterojunction TechnologyR. Reiner, P. Waltereit, B. Weiss, S. Mönch, M. Wespel, S. Müller, M. Mikulla, R. Quay, and O. Ambacher
Cosmic Ray Withstand Capability of RB-IGBT Utilizing different gate conditionsDaniel Hofmann
A snap-back free Shorted Anode Super-Junction CIGBTPeng Luo, Mark Sweet, E.M.S. Narayanan
Modelling of Press-Pack High Power IGBT ModulesH. Y. Long, M. R. Sweet, Prof Shankar E. Madathil
Impact of Different Packages on Fast Switching Silicon Carbide Bipolar Junction TransistorsCh. Bödeker, M. Adelmund, R. Singh, and N. Kaminski
Design considerations for charge-compensated power MOSFET in the medium-voltage rangeRalf Siemieniec, Cesar Braz, Oliver Blank
A new Vertical JFET Technology for Harsh Radiation ApplicationsP. Fernández-Martínez, D. Flores, S. Hidalgo, D. Quirion, M. Ullán
Analysis of Drain Current Saturation Behaviour in GaN PSJ HFETsV. Unni & E.M.S. Narayanan
Monolithic Integration of GaN-based Normally-off Pand N-channel MOSFETsA. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, and H.Ohashi
Diamond Semiconductor DevicesA. Traoré, A. Nakajima, T. Makino, D. Kuwabara, H. Kato, M. Ogura, D. Takeuchi and S. Yamasaki
Verze 60.1 naposledy upravil Martin Molhanec - 09/01/2017 - 10:46

Komentáře 0

Žádné komentáře pro tento dokument

Přílohy 15

PDF
01SiliconCarbidePowerDevi~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (6Mb )
PDF
02FastDiodeAnodeDesignCon~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (809kb )
PDF
03Novelcathodedesigntoimp~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
04TheHGTDASOIPowerDiodefo~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (3Mb )
PDF
05OvercomingSwitchingLimi~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
06Monolithically-Integrat~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (3Mb )
PDF
07CosmicRayWithstandCapab~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1007kb )
PDF
08AsnapbackfreeShortedAno~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (954kb )
PDF
09ModellingofPress-PackHi~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
10ImpactofDifferentPackag~.pdf 1.1
PostedBy: Martin Molhanec na 09/01/2017 (795kb )
PDF
11Designconsiderationsfor~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
12AnewVerticalJFETTechnol~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (5Mb )
PDF
13AnalysisofDrainCurrentS~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
14MonolithicIntegrationof~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (1Mb )
PDF
15DiamondSemiconductorDev~.pdf 1.1
PostedBy: Martin Molhanec na 18/10/2016 (3Mb )

Vytvořil: Martin Molhanec - 2016/10/18 15:57
Copyright Department of Electrotechnology of CTU FEE in Prague
XWiki Enterprise 1.5.11446 - Documentation